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  dm g2301lk document number: ds 38438 rev. 2 - 2 1 of 7 www.diodes.com april 2016 ? diodes incorporated new product DMG2301LK p - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = + 25c - 20 v 160m ? @ v gs = - 4.5 v - 2.4a 2 1 0m ? @ v gs = - 2.5 v - 2.1 a features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability description and applications t his mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching perfor mance, making it ideal for high - efficiency power management applications. ? backlighting ? power management functions ? dc - dc converters ? motor c ontrol mechanical data ? case: sot 23 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? matte tin annealed over copper leadframe . solderable per mil - std - 202, method 208 ? terminals connections: see diagram below ? weight: 0.00 9 grams ( approximate ) ordering information (note 4 ) part number case packaging dm g2301l k - 7 sot23 3 , 000/tape & reel d mg2301l k - 13 sot23 10 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2016 2017 2018 201 9 20 20 20 2 1 2022 2023 code d e f g h i j k month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d t op v iew internal schematic t op v iew 2 1k = product type marking code ym = date code marking y or y = year (ex: d = 20 16 ) m = month (ex: 9 = september) esd protected gate d g s d s g g ate protection diode 21k y m
dm g2301lk document number: ds 38438 rev. 2 - 2 2 of 7 www.diodes.com april 2016 ? diodes incorporated new product DMG2301LK maximum ratings ( @t a = + 25c , unless otherwise specified . ) characteristic symbol value unit drain - source voltage v dss - 20 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = - 4.5v steady state t a = + 25c t a = + 70c i d - 2.4 - 1.9 a maximum continuous body diode forward current (note 6 ) i s - 1.12 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm - 8 a thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) p d 0.84 w thermal resistance, junction to ambient (note 5 ) steady state r ja 150 c/w total power dissipation (note 6 ) p d 1.40 w thermal resistance, junction to ambient (note 6 ) steady state r ja 91 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = + 25c , unless otherwise specified ) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 20 ? ? gs = 0v, i d = - 250 a zero gate volt age drain current ( t j = + 25 ? dss ? ? a v ds = - 16 v, v gs = 0v gate - source leakage i gss ? ? a v gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) - 0. 3 - 0.6 - 1. 0 v v ds = v gs , i d = - 250a static drain - source on - resistance r ds(on) ? m? gs = - 4.5v, i d = - 1.0 a 183 210 v gs = - 2.5v, i d = - 1 .0a 229 2 98 v gs = - 1.8 v, i d = - 0.2 a diode forward voltage v sd ? gs = 0v, i s = - 1.0a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = - 6 v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5v ) q g ? ? ds = - 6 v, i d = - 2.2 a total gate charge ( v gs = - 10 v ) q g ? ? gs ? ? gd ? ? d( on ) ? ? ds = - 6 v, v gs = - 4.5v, r g en = 6 ? d = - 1a turn - on rise time t r ? ? d( off ) ? ? f ? ? rr ? ? f = - 1.0 a, di/dt = 1 00a/ rr ? ? notes: 5. device mounted on fr - 4 pcb, with minimum recommended pad layout . 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm g2301lk document number: ds 38438 rev. 2 - 2 3 of 7 www.diodes.com april 2016 ? diodes incorporated new product DMG2301LK 0.0 1.0 2.0 3.0 4.0 5.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = - 1.0v v gs = - 1.2v v gs = - 1.5v v gs = - 10.0v v gs = - 2.5v v gs = - 2.0v v gs = - 4.5v 0.12 0.14 0.16 0.18 0.2 0.22 0 1 2 3 4 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = - 4.5v v gs = - 2.5v 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 12 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 0.2a i d = - 1.0a 0.1 0.12 0.14 0.16 0.18 0.2 0.22 0 1 2 3 4 5 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature - 55 25 85 150 125 v gs = - 4.5v 0.6 0.8 1 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 4.5v, i d = - 1.0a v gs = - 2.5v, i d = - 1.0a 0 1 2 3 4 5 0.2 0.6 1 1.4 1.8 2.2 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 5v t a = - 55 t a = 25 t a = 85 t a = 125 t a = 150
dm g2301lk document number: ds 38438 rev. 2 - 2 4 of 7 www.diodes.com april 2016 ? diodes incorporated new product DMG2301LK 0.05 0.1 0.15 0.2 0.25 0.3 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs = - 4.5v, i d = - 1.0a v gs = - 2.5v, i d = - 1.0a 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 is, source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c 10 100 1000 0 5 10 15 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 1 2 3 4 vgs (v) qg (nc) figure 11. gate charge v ds = - 6v, i d = - 2.2a 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area p w =10s p w =10ms p w =100 s dc r ds(on) limited p w =1ms p w =100ms t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = - 4.5v p w =1s 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma
dm g2301lk document number: ds 38438 rev. 2 - 2 5 of 7 www.diodes.com april 2016 ? diodes incorporated new product DMG2301LK 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 146
dm g2301lk document number: ds 38438 rev. 2 - 2 6 of 7 www.diodes.com april 2016 ? diodes incorporated new product DMG2301LK package outline dimensions please see http://www.diodes.com/ package - outlines.html for the latest version. sot23 suggested pad layout please see http://www.diodes.com/ package - outlines.html for the latest version. sot23 sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a 0 8 -- all dimensions in mm dimensions value (in mm) c 2.0 x 0.8 x1 1.35 y 0.9 y1 2.9 x y y1 c x1 j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a
dm g2301lk document number: ds 38438 rev. 2 - 2 7 of 7 www.diodes.com april 2016 ? diodes incorporated new product DMG2301LK important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are sp ecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or sys tems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com


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